谁能帮我翻译一下这段英文文献啊 哪位大侠能帮我翻译一下这段英文文献吗？
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copper matrix.
图形一展示了 钻石颗粒可以分散在铜质型片里
Since the diamond particles are easy to be
stripped off during mechanical polishing, small pits are left
on the surface of samples.
由于这些钻石颗粒在化学抛光的过程中很容易分离出来，所以样品的表面会留下小凹痕
When the samples were analyzed
by electron probe for carbon, the particles displayed high
carbon peaks, as shown in Fig. 2.
当这些样品电子探针被分解时，这些微粒表现出高的碳值（carbon peak是某化学术语吧，不了解）就如2图所示
Fig. 3 exhibits the analyzed result for extracted
product of the copper–diamond composite by X-ray
diffraction (XRD) analysis.
(图三展示了对铜钻石的提取物质用X-ray(XRD分析方法）分析的分析结果)。。
It is shown that three diffraction peaks exist, shown as A, B and C, respectively.
（他说明如果衍射峰存在的话，就分别像A，B，C）
The interplanar distances corresponding to the three
peaks and standard ones for diamond are compared in
Table 1.
（这些对应三个峰的晶面间的距离，和标准值在图一中作了对比）
The measured values of the interplanar distances
are in good agreement with the standard ones, demon-
strating that the extracted product should be the carbon
in diamond state.
(经过测试的晶面间的距离和标准值一致，说明这些提取物质应该是钻石形态时的碳 ）（神马竟然还有钻石形态，总不能是钻石州吧）
Fig. 4(a) gives a TEM micrograph showing distribution
and morphology of diamond particles (indicated as A, B,
and C) in the copper–diamond composite.
图四A是一个TEM显微照片展示了铜钻石合成体的的分布及形态，就如ABC图所展示的
The calibration of interplanar distance for diffraction rings in Fig. 4(b) was
given in Table 2.
图四晶面间的距离衍射环的校准在图表2中
Compared to Table 1, it is also demonstrated that the calibrated interplanar distances for the
diffraction rings conform to the standard ones of diamond.
与一相比，他也说明了图四晶面间的距离衍射环的校准与标准样本相符
Therefore, it is believed that the graphitization of diamond
particles hardly occurs after sintering at 1150–1220 K in the copper–diamond composite.
所以说，钻石颗粒的石墨化几乎不会发生在尽力了1150-1220k在铜钻化合物烧结过后
Although diamond is a metastable allotropic modification of carbon, the graphitization of diamond particles in the copper–diamond composite did not occur, or the degree of
graphitization was too small to be found.
（尽管钻石是碳的同素异形体，钻石的石墨化在铜钻化合物中不会发生，或者就是石墨化程度很小，没有发现）
It is believed that the beginning temperature of graphi-
tization would be associated with the purity of diamond powders.
我们相信石墨化的温度和钻石的纯度有关
The impurities such as some metallic elements reduce the beginning temperature of diamond graphitization.
像金属元素这些杂志，减低了需要石墨化的温度
When diamond is fabricated by the static synthesis method, Fe and Ni are often used as catalysts and are present in diamond as impurities to decrease the beginning
temperature of graphitization
（在用静电合成方法构造钻石时，Fe和镍是作为催化剂的，他们也作为杂质减低了钻石石墨化的温度）
[6]. It is understandable that both for the graphitization and its reverse reactions, their
activation energies can be decreased by catalytic agents.
（这很容易理解，石墨化合它的逆向反应，他们的发生能力都会因为催化剂而降低）
Compared with the diamond fabricated by static synthesis,the diamond powders prepared by explosion method do not contain metallic impurities, thus leading to an obvious
increase in the beginning temperature of graphitization.
（与用静电合成方法构造的钻相比石，用爆炸方法取得的钻石不包含金属杂志，提高了石墨化的起始的温度）
Hence, the detonation synthetic diamond might be more
resistant to graphitization and probably suitable for the
electric contact materials.
（因此，爆炸合成的钻石更加能抵制石墨化，同时也更合适和电接触的物质，就是带电体）
希望采纳！本人能力有限！只能帮到这
图1显示金刚石粒子分散的
铜基体。自从金刚石粒子比较容易
在机械抛光脱下衣服,小坑里留下了。
表面上的样品。当样品进行了分析
通过电子探针对碳、粒子显示高
碳的山峰,如图2号。
图3的展品分析结果为提取出来
copper-diamond产品的复合利用x射线
衍射(XRD)分析。结果表明,三见dis -
分数峰存在,表现为一,B和C,分别。
距离的interplanar相应于这三套
对钻石峰标准的比较
表1。interplanar测量值的距离
在标准的吻合很好,恶魔-
起动,提取的产品应该是碳
在钻石的状态。
图4(a)给出了透射电镜显微图显示分布
金刚石粒子形貌和(显示为A,B,
copper-diamond和C)复合材料。 校准
interplanar衍射环的距离图4中了(b)
所给的表2。相比,表1,它也是恶魔-
strated interplanar距离的校准的
衍射环的符合标准的钻石。
因此,人们相信石墨化的钻石
在粒子1150-1220几乎不发生后的烧结K
copper-diamond复合材料。
尽管钻石是亚稳态allotropic modifica -
实践,石墨化碳的金刚石粒子在
copper-diamond复合,没有发生,或者程度
石墨化太小,被发现。
据说起始温度的graphi -
tization会伴随着纯度的钻石
粉末等。某些金属等杂质元素
减少金刚石graphitiza起始温度-
信息。金刚石是静态合成捏造出来的
方法、铁、镍催化剂和经常被用于
目前在钻饰作为杂质,降低开始
蛋彩画颜料
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绛旓細鏈杩戞病鎬庝箞鍥炵瓟闂~濂芥瀛﹁繃MEMS~灏遍『甯﹀洖澶嶄竴涓 閭ｄ袱浣嶆満璇戠殑~涓鑳藉府浜鸿В鍐抽棶棰樺氨涓嶈鍑戠儹闂瑰惂 Micro devices assembly and MEMS are two distinctly different but related areas.銆愬井鍨嬭缃閰嶅拰寰數瀛愭満姊扮郴缁熸槸涓や釜鍒嗛棬鐙珛鍗存湁鐩镐簰鑱旂郴鐨勯鍩熴傘慚icro-electro Mechanical Systems (MEMS) are ...
绛旓細6姣背,l锛氭湁涓180 000 h−1 鐨勬皵浣撴瘡灏忔椂绌洪棿閫熷害(GHSV锛夊拰涓涓0.5鍗%CH4,2鍗%O2 鐨勬皵浣撴祦鍔ㄦ垚鍒嗙殑300姣背杩涘叆浠栵紱鎬 flowrate 鏄0.18 l/鍒嗛挓銆傛皵浣撹缃敱涓鎻愪緵瀵硅捣鍙嶅簲鐨勪汉鍙嶄綔鐢ㄦ皵浣撶殑涓変釜涓讳綋娴佸姩瀹¤鍛樻瀯鎴愶紱閫嗘祦鍦拌捣鍙嶅簲鐨勪汉鐨勪竴涓皵浣撴摝娲楄呰瀹夋斁涓庢贩鍚堬紝涓轰簡淇濊瘉鑳藉緱鍒板畬鏁...
绛旓細鐑х粨琛屼负鍙婄粨鏅剁幓鐠冪殑鏇逛簩姘у寲纭呮哀鍖栭晛-浜旀哀鍖栦簩纾风郴缁熺爺绌朵簡姘у寲閾佺殑鑰冭檻 鏅舵牳鍓. 鍔犱笂5.0姣井鍏. 姘у寲閾佺幓鐠冨埗浣滀簡鐑х粨鎴愮幓鐠冮櫠鐡枫佹満姊板己搴︺侀珮瀵嗗害. 鐜荤拑闄剁摲鍚湁纾风伆鐭,纾风伆鐭炽侀忚緣鐭充綆娓╂湡,姝ゅ,纭呯伆鐭抽珮娓. 涓婅堪鐜荤拑闄剁摲鍏锋湁娓╁拰鑰屼笉鍙戠梾鍙姞宸ラ鎶....
绛旓細investments姣旇閾惰鍥㈣仈鍚堣捶娆剧殑閭ｄ簺鏈夎緝灏戝彲鍙樻с 杩欎釜缁撴灉鐨勫彟涓绉嶆兜涔夋槸閭 more鐚涚儓鍒涙柊搴旇瀵艰嚧鏇村浼佷笟鑱斿悎缁勭粐鍖栵細 Hopp鍜孯ieder (2006)鍙戠幇閭 syndication涓鏇村姞鎴愮啛鐨勪骇涓氭槸杈冧笉棰戠箒銆 杩欎釜缁撴灉鏄惁涓捐鍦ㄧ墷鍥虹殑 level浠嶇劧鏄竴涓粡楠屼富涔夌殑闂銆 绮剧‘鍦拌娴嬭瘯鎴戜滑鐨勬ā鍨嬬殑棰勮█锛屼竴涓兘 identify...
绛旓細materials and methods 鏉愭枡涓庢柟娉 鏃╁湪杩欎釜椤圭洰涓紝鎴戜滑娉ㄦ剰鍒伴渶瑕佸埗瀹氫竴涓紶鎰熺郴缁熻兘澶熼娴嬫綔鍦ㄧ殑鐗ц崏姘礌鍚告敹锛堢煶绛変汉銆傦紝1996锛夊拰灏忛害绫界矑浜ч噺鍦╩eter-level绌洪棿鍒嗚鲸鐜囥傛垜浠殑鎴樼暐鐮旂┒渚濊禆浜庨仴鎰熷弽灏勫厜璋辨祴閲忎及绠楁爱绱犲惛鏀跺拰鏈缁堜骇閲忋傝繖浜涗及璁℃槸鐢ㄦ潵璋冭妭澧炲姞姘偉鍦ㄦ棭鏈熺敓闀块樁娈电殑妞嶇墿[ feekes4鍜6锛堝ぇ锛1954...
